CS5N50
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS5N50
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package:
TO-254
CS5N50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS5N50
Datasheet (PDF)
..1. Size:124K china
cs5n50.pdf
CS5N50 N PD TC=25 74 W 0.59 W/ ID VGS=10V,TC=25 5.0 A ID VGS=10V,TC=100 3.2 A IDM 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.7 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=3A 1.4
0.1. Size:2112K jilin sino
jcs5n50vt jcs5n50rt jcs5n50ct jcs5n50ft.pdf
N RN-CHANNEL MOSFET JCS5N50T Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS Rdson-max 1.6 @Vgs=10V 15 nC Qg-typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.2. Size:1627K jilin sino
jcs5n50.pdf
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS5N50T \ Package ;NSpe MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson@Vgs=10V 1.6&! Qg 15 nC APPLICATIONS (u High efficiency switch _sQ5un
0.3. Size:2342K jilin sino
jcs5n50vc jcs5n50rc jcs5n50cc jcs5n50fc.pdf
N RN-CHANNEL MOSFET JCS5N50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 14nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
0.4. Size:1923K blue-rocket-elect
brcs5n50yu.pdf
BRCS5N50YU Rev.A Aug.-2023 DATA SHEET / Descriptions DFN88-4L N Dual N-CHANNEL MOSFET in a DFN88-4L Plastic Package. / Features V (V)=500V I =5A DS DRDS(ON)@10V
Datasheet: IRFP360LC
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