CS64N90 Specs and Replacement

Type Designator: CS64N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 92 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 442 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00745 Ohm

Package: TO-220

CS64N90 substitution

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CS64N90 datasheet

 ..1. Size:896K  thinkisemi
 cs64n90f cs64n90 cs64n90b.pdf pdf_icon

CS64N90

CS64N90 Pb CS64N90 Pb Free Plating Product 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 (TO-220 HeatSink) CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea... See More ⇒

 9.1. Size:603K  cass
 cs64n12 csn64n12.pdf pdf_icon

CS64N90

CS64N12 CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)... See More ⇒

Detailed specifications: CS630F, CS630FA9H, CS634F, CS640, CS640A0H, CS640A8H, CS640F, CS640FA9H, 2SK3568, CS64N90B, CS64N90F, CS65N20-30, CS6660, CS6661, CS6766, CS6768, CS6769

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