CS64N90 Datasheet and Replacement
Type Designator: CS64N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 92 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 442 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00745 Ohm
Package: TO-220
CS64N90 substitution
CS64N90 Datasheet (PDF)
cs64n90f cs64n90 cs64n90b.pdf

CS64N90 PbCS64N90Pb Free Plating Product85V,92A N-Channel Trench Process Power MOSFETGeneral Description CS64N90(TO-220 HeatSink)CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS GFea
cs64n12 csn64n12.pdf

CS64N12\ CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)
Datasheet: CS630F , CS630FA9H , CS634F , CS640 , CS640A0H , CS640A8H , CS640F , CS640FA9H , 5N65 , CS64N90B , CS64N90F , CS65N20-30 , CS6660 , CS6661 , CS6766 , CS6768 , CS6769 .
Keywords - CS64N90 MOSFET datasheet
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