All MOSFET. CS64N90 Datasheet

 

CS64N90 Datasheet and Replacement


   Type Designator: CS64N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 106 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00745 Ohm
   Package: TO-220
 

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CS64N90 Datasheet (PDF)

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 cs64n90f cs64n90 cs64n90b.pdf pdf_icon

CS64N90

CS64N90 PbCS64N90Pb Free Plating Product85V,92A N-Channel Trench Process Power MOSFETGeneral Description CS64N90(TO-220 HeatSink)CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS GFea

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 cs64n12 csn64n12.pdf pdf_icon

CS64N90

CS64N12\ CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N5516

Keywords - CS64N90 MOSFET datasheet

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