All MOSFET. CS64N90B Datasheet

 

CS64N90B Datasheet and Replacement


   Type Designator: CS64N90B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00745 Ohm
   Package: TO-263
 

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CS64N90B Datasheet (PDF)

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 cs64n90f cs64n90 cs64n90b.pdf pdf_icon

CS64N90B

CS64N90 PbCS64N90Pb Free Plating Product85V,92A N-Channel Trench Process Power MOSFETGeneral Description CS64N90(TO-220 HeatSink)CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS GFea

 9.1. Size:603K  cass
 cs64n12 csn64n12.pdf pdf_icon

CS64N90B

CS64N12\ CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)

Datasheet: CS630FA9H , CS634F , CS640 , CS640A0H , CS640A8H , CS640F , CS640FA9H , CS64N90 , STP80NF70 , CS64N90F , CS65N20-30 , CS6660 , CS6661 , CS6766 , CS6768 , CS6769 , CS6790 .

History: IRHMJ57160 | NVD4806N | NCEP40T11AG | CS5N65A3 | TPCA8008-H | NCE70N900I | GSM6424

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