All MOSFET. CS65N20-30 Datasheet

 

CS65N20-30 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS65N20-30

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TO-263

CS65N20-30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS65N20-30 Datasheet (PDF)

1.1. cs65n20-30.pdf Size:111K _update_mosfet

CS65N20-30

CS65N20-30 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 375 W ID (VGS=10V,TC=25℃) 65 A 极 IDM 140 A 限 VGS ±20 V 值 Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.4 ℃/W 性 BVDSS VGS=0V,ID=0.25 mA 200 V RDS on) VGS=10V,ID=30A 0.05 Ω ( VGS th) VDS=VGS,ID=0.25mA 2.0 4.0 V ( 电 gfs

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


CS65N20-30
  CS65N20-30
  CS65N20-30
 

social 

LIST

Last Update

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |

 

 

 
Back to Top