CS65N20-30 PDF and Equivalents Search

 

CS65N20-30 Specs and Replacement

Type Designator: CS65N20-30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-263

CS65N20-30 substitution

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CS65N20-30 datasheet

 ..1. Size:111K  china
 cs65n20-30.pdf pdf_icon

CS65N20-30

CS65N20-30 N PD TC=25 375 W ID VGS=10V,TC=25 65 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VGS=10V,ID=30A 0.05 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs... See More ⇒

Detailed specifications: CS640 , CS640A0H , CS640A8H , CS640F , CS640FA9H , CS64N90 , CS64N90B , CS64N90F , RFP50N06 , CS6660 , CS6661 , CS6766 , CS6768 , CS6769 , CS6790 , CS6796 , CS6798 .

History: HUF76407P3

Keywords - CS65N20-30 MOSFET specs

 CS65N20-30 cross reference
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