CS6660 Specs and Replacement

Type Designator: CS6660

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO18

CS6660 substitution

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CS6660 datasheet

 ..1. Size:102K  china
 cs6660.pdf pdf_icon

CS6660

CS6660 N PD TC=25 6.25 W 0.05 W/ ID VGS=10V,TC=25 1.1 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 20 /W RthJA 125 BVDSS VGS=0V,ID=0.01mA 60 V RDS on VGS=10V,ID=1A 3 VGS th VDS=VGS,ID=1m... See More ⇒

 9.1. Size:124K  china
 cs6661.pdf pdf_icon

CS6660

CS6661 N PD TC=25 6.25 W 0.05 W/ ID VGS=10V,TC=25 0.9 A ID VGS=10V,TC=100 0.7 A IDM 3 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 8.3 /W BVDSS VGS=0V,ID=0.01mA 90 125 V RDS on VGS=10V,ID=1A 4 ... See More ⇒

Detailed specifications: CS640A0H, CS640A8H, CS640F, CS640FA9H, CS64N90, CS64N90B, CS64N90F, CS65N20-30, SI2302, CS6661, CS6766, CS6768, CS6769, CS6790, CS6796, CS6798, CS6849

Keywords - CS6660 MOSFET specs

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