All MOSFET. CS6849 Datasheet

 

CS6849 Datasheet and Replacement


   Type Designator: CS6849
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO18
 

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CS6849 Datasheet (PDF)

 ..1. Size:59K  china
 cs6849.pdf pdf_icon

CS6849

CS6849P PD TC=25 25 W 0.2 W/ID VGS=-10V,TC=25 -6.5 AID VGS=-10V,TC=100 -4.1 AIDM -25 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 5.0 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-4.1A 0.45

 0.1. Size:66K  china
 cs6849u.pdf pdf_icon

CS6849

CS6849UP PD TC=25 25 W 0.20 W/ID VGS=-10V,TC=25 -6.5 AID VGS=-10V,TC=100 -4.1 AIDM -25 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 5.0 /W BVDSS VGS=0V,ID=-1.0mA -100 VRDS on VGS=-10V,ID=-4.1A 0.30

 9.1. Size:68K  comset
 cs684.pdf pdf_icon

CS6849

CS684 TO3 PNP SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. CS684 is the BD684 in TO3 package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 140 V -VCBO Collector-Base Voltage 140 V -VE

Datasheet: CS6660 , CS6661 , CS6766 , CS6768 , CS6769 , CS6790 , CS6796 , CS6798 , 7N60 , CS6849U , CS6N60A3TY , CS6N60A4D , CS6N60A4TY , CS6N60F , CS6N60FA9TY , CS6N70A3D-G , CS6N70A4D-G .

History: 2SK2138 | AM10P10-530D | PD600BA | GSM3310W | STL80N3LLH6 | IXTM14N80 | P2003BEAA

Keywords - CS6849 MOSFET datasheet

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