CS6849 Specs and Replacement
Type Designator: CS6849
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO18
CS6849 substitution
CS6849 datasheet
cs6849.pdf
CS6849 P PD TC=25 25 W 0.2 W/ ID VGS=-10V,TC=25 -6.5 A ID VGS=-10V,TC=100 -4.1 A IDM -25 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 5.0 /W BVDSS VGS=0V,ID=-0.25mA -100 V RDS on VGS=-10V,ID=-4.1A 0.45 ... See More ⇒
cs6849u.pdf
CS6849U P PD TC=25 25 W 0.20 W/ ID VGS=-10V,TC=25 -6.5 A ID VGS=-10V,TC=100 -4.1 A IDM -25 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 5.0 /W BVDSS VGS=0V,ID=-1.0mA -100 V RDS on VGS=-10V,ID=-4.1A 0.30 ... See More ⇒
cs684.pdf
CS684 TO3 PNP SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. CS684 is the BD684 in TO3 package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 140 V -VCBO Collector-Base Voltage 140 V -VE... See More ⇒
Detailed specifications: CS6660 , CS6661 , CS6766 , CS6768 , CS6769 , CS6790 , CS6796 , CS6798 , 2N60 , CS6849U , CS6N60A3TY , CS6N60A4D , CS6N60A4TY , CS6N60F , CS6N60FA9TY , CS6N70A3D-G , CS6N70A4D-G .
History: NDB6020P
Keywords - CS6849 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NDB6020P
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