All MOSFET. CS6849 Datasheet

 

CS6849 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS6849

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO18

CS6849 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS6849 Datasheet (PDF)

1.1. cs6849.pdf Size:59K _update_mosfet

CS6849

CS6849型P沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 25 W 线性降低系数 0.2 W/℃ ID (VGS=-10V,TC=25℃) -6.5 A 极 ID (VGS=-10V,TC=100℃) -4.1 A 限 IDM -25 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 5.0 ℃/W 性 BVDSS VGS=0V,ID=-0.25mA -100 V RDS on) VGS=-10V,ID=-4.1A 0.45 Ω

1.2. cs6849u.pdf Size:66K _update_mosfet

CS6849

CS6849U型P沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 25 W 线性降低系数 0.20 W/℃ ID (VGS=-10V,TC=25℃) -6.5 A 极 ID (VGS=-10V,TC=100℃) -4.1 A 限 IDM -25 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 5.0 ℃/W 性 BVDSS VGS=0V,ID=-1.0mA -100 V RDS on) VGS=-10V,ID=-4.1A 0.30 Ω

 5.1. cs684.pdf Size:68K _update

CS6849
CS6849

CS684 TO3 PNP SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. CS684 is the BD684 in TO3 package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 140 V -VCBO Collector-Base Voltage 140 V -VE

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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