CS7000 Specs and Replacement
Type Designator: CS7000
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-92
CS7000 substitution
- MOSFET ⓘ Cross-Reference Search
CS7000 datasheet
brcs700p10dp.pdf
BRCS700P10DP Rev.C Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-22A D RDS(ON)@-10V... See More ⇒
brcs7002k2zk.pdf
BRCS7002K2ZK Rev.A Jul.-2020 DATA SHEET / Descriptions DFN1006-3L-0.5 N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 1006-3L Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protect... See More ⇒
cs7002k.pdf
2N7002K(CS7002K) N-Channel MOSFET/N MOS Purpose Intended for use in general purpose switching and phase control applications. 2KV Features Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV. /Abs... See More ⇒
Detailed specifications: CS6N70A4D-G, CS6N70FA9D, CS6N70FB9D, CS6N80A8, CS6N80ARH, CS6N80FA9, CS6N90ARH-G, CS6N90FA9H, K2611, CS7002, CS7002K, CS7218, CS7225, CS7233, CS7236, CS730A3RD, CS730A4RD
Keywords - CS7000 MOSFET specs
CS7000 cross reference
CS7000 equivalent finder
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