2SK1132 Specs and Replacement
Type Designator: 2SK1132
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SST
2SK1132 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1132 datasheet
Detailed specifications: 2SK1017, 2SK1019, 2SK105, 2SK1059, 2SK1060, 2SK1109, 2SK1122, 2SK1123, IRF3710, 2SK1133, 2SK1177, 2SK1178, 2SK1179, 2SK1180, 2SK1181, 2SK1183, 2SK1184
Keywords - 2SK1132 MOSFET specs
2SK1132 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SWD7N70K | AP03N70P-A
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