All MOSFET. CS7N80A8 Datasheet

 

CS7N80A8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N80A8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 34 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO-220AB

CS7N80A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS7N80A8 Datasheet (PDF)

1.1. cs7n80a8.pdf Size:424K _update_mosfet

CS7N80A8
CS7N80A8

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

4.1. cs7n80f.pdf Size:265K _update_mosfet

CS7N80A8
CS7N80A8

BRF7N80(CS7N80F) N-Channel MOSFET/N 沟 MOS 晶体管 用途: 用于高效 DC/DC 转换和功率开关 Purpose: These devices are well suited for high efficiency switch mode power supplies. 特点:低的门槛电压、反向传输电容小、开关速度快。 Features: Low gate charge、Low Crss 、Fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

4.2. cs7n80f a9.pdf Size:303K _crhj

CS7N80A8
CS7N80A8

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description: VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.3. cs7n80 a8.pdf Size:424K _crhj

CS7N80A8
CS7N80A8

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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