CS7N80A8 Specs and Replacement
Type Designator: CS7N80A8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220AB
CS7N80A8 substitution
CS7N80A8 datasheet
cs7n80a8.pdf
Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25 ) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf
N R N-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po... See More ⇒
cs7n80 a8.pdf
Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25 ) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒
Detailed specifications: CS7N60F , CS7N60FA9HD , CS7N60FA9HDY , CS7N65A0D , CS7N65A3TDY , CS7N65A4TDY , CS7N65FA9TDY , CS7N70ARD , 7N65 , CS7N80F , CS7NJZ44V , CS7Y1905C , CS80N60P3 , CS830 , CS830A3RD , CS830A4RD , CS830A8RD .
History: FQU8P10
Keywords - CS7N80A8 MOSFET specs
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CS7N80A8 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FQU8P10
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