CS80N60P3 Specs and Replacement
Type Designator: CS80N60P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-258
CS80N60P3 substitution
- MOSFET ⓘ Cross-Reference Search
CS80N60P3 datasheet
cs80n60p3.pdf
CS80N60P3 N PD TC=25 1300 W ID VGS=10V,TC=25 80 A IDM 200 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.096 /W BVDSS VGS=0V,ID=1mA 600 V RDS on VGS=10V,ID=40A 0.07 VGS th VDS=VGS,ID=8mA 3.0 5.0 V ... See More ⇒
jcs80n08i.pdf
N R N-CHANNEL MOSFET JCS80N08I MAIN CHARACTERISTICS Package ID 80A VDSS 80V Rdson-max - 9m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap... See More ⇒
jcs80n10i.pdf
N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap... See More ⇒
brcs80n03dp.pdf
BRCS80N03DP Rev.D Mar.-2020 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. Halogen-free Product. / Applicati... See More ⇒
Detailed specifications: CS7N65A3TDY, CS7N65A4TDY, CS7N65FA9TDY, CS7N70ARD, CS7N80A8, CS7N80F, CS7NJZ44V, CS7Y1905C, AON7408, CS830, CS830A3RD, CS830A4RD, CS830A8RD, CS830F, CS830FA9RD, CS840, CS840A8D
Keywords - CS80N60P3 MOSFET specs
CS80N60P3 cross reference
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CS80N60P3 replacement
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