CS910TH MOSFET. Datasheet pdf. Equivalent
Type Designator: CS910TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO-267A
CS910TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS910TH Datasheet (PDF)
cs910th.pdf
CS910TH N PD TC=25 18 W 0.32 W/ VGS=10V,TC=25 9.4 ID A VGS=10V,TC=100 6.6 IDM 38 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 3.1 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=5.6A 0.21
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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