All MOSFET. CS910TH Datasheet

 

CS910TH Datasheet and Replacement


   Type Designator: CS910TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-267A
 

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CS910TH Datasheet (PDF)

 ..1. Size:104K  china
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CS910TH

CS910TH N PD TC=25 18 W 0.32 W/ VGS=10V,TC=25 9.4 ID A VGS=10V,TC=100 6.6 IDM 38 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 3.1 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=5.6A 0.21

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