CS910TH Specs and Replacement
Type Designator: CS910TH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO-267A
CS910TH substitution
- MOSFET ⓘ Cross-Reference Search
CS910TH datasheet
cs910th.pdf
CS910TH N PD TC=25 18 W 0.32 W/ VGS=10V,TC=25 9.4 ID A VGS=10V,TC=100 6.6 IDM 38 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 3.1 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=5.6A 0.21 ... See More ⇒
Detailed specifications: CS8N60FA9H, CS8N65A0H, CS8N65A8H, CS8N65FA9H, CS8N80FA9D, CS8N90FA9HD, CS90N03B4, CS90N20D, IRFP450, CS9140, CS9530, CS9532, CS9540, CS9620, CS9640, CS9945BEY, CS9N90ANHD
Keywords - CS910TH MOSFET specs
CS910TH cross reference
CS910TH equivalent finder
CS910TH pdf lookup
CS910TH substitution
CS910TH replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NCE60P09K
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