All MOSFET. CS910TH Datasheet

 

CS910TH Datasheet and Replacement


   Type Designator: CS910TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-267A
 

 CS910TH substitution

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CS910TH Datasheet (PDF)

 ..1. Size:104K  china
 cs910th.pdf pdf_icon

CS910TH

CS910TH N PD TC=25 18 W 0.32 W/ VGS=10V,TC=25 9.4 ID A VGS=10V,TC=100 6.6 IDM 38 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 3.1 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=5.6A 0.21

Datasheet: CS8N60FA9H , CS8N65A0H , CS8N65A8H , CS8N65FA9H , CS8N80FA9D , CS8N90FA9HD , CS90N03B4 , CS90N20D , IRF1407 , CS9140 , CS9530 , CS9532 , CS9540 , CS9620 , CS9640 , CS9945BEY , CS9N90ANHD .

History: IXTM12N100 | IXTM13N80 | CED07N65A

Keywords - CS910TH MOSFET datasheet

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