CSI4N60 Specs and Replacement

Type Designator: CSI4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251

CSI4N60 substitution

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CSI4N60 datasheet

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CSI4N60

BRI4N60(CSI4N60) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒

Detailed specifications: CSE130, CSE220, CSE230, CSE9130, CSE9210, CSF230, CSF9024, CSI460, 75N75, CSL2803, CSLR024, CSM064, CSM150, CSM260, CSM350, CSML0060, CSN440

Keywords - CSI4N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs