All MOSFET. CSI4N60 Datasheet

 

CSI4N60 Datasheet and Replacement


   Type Designator: CSI4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251
 

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CSI4N60 Datasheet (PDF)

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CSI4N60

BRI4N60(CSI4N60) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

Datasheet: CSE130 , CSE220 , CSE230 , CSE9130 , CSE9210 , CSF230 , CSF9024 , CSI460 , IRF520 , CSL2803 , CSLR024 , CSM064 , CSM150 , CSM260 , CSM350 , CSML0060 , CSN440 .

History: SFB049N80C3 | CSI460 | P1065AT

Keywords - CSI4N60 MOSFET datasheet

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