CSI4N60 Datasheet and Replacement
Type Designator: CSI4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251
CSI4N60 substitution
CSI4N60 Datasheet (PDF)
csi4n60.pdf
BRI4N60(CSI4N60) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
Datasheet: CSE130 , CSE220 , CSE230 , CSE9130 , CSE9210 , CSF230 , CSF9024 , CSI460 , IRF520 , CSL2803 , CSLR024 , CSM064 , CSM150 , CSM260 , CSM350 , CSML0060 , CSN440 .
History: DH100P40 | RQA0008NXAQS | AM2394NE | APT6029BLL | VBA1410 | VBA3211 | P0920BD
Keywords - CSI4N60 MOSFET datasheet
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History: DH100P40 | RQA0008NXAQS | AM2394NE | APT6029BLL | VBA1410 | VBA3211 | P0920BD
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