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CSD19531KCS Specs and Replacement


   Type Designator: CSD19531KCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: TO-220
 

 CSD19531KCS substitution

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CSD19531KCS Specs

 ..1. Size:398K  texas
csd19531kcs.pdf pdf_icon

CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19531KCS SLPS407B SEPTEMBER 2013 REVISED JULY 2014 CSD19531KCS 100-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total... See More ⇒

 6.1. Size:1281K  texas
csd19531q5a.pdf pdf_icon

CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19531Q5A SLPS406B SEPTEMBER 2013 REVISED MAY 2014 CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total... See More ⇒

 7.1. Size:404K  texas
csd19536kcs.pdf pdf_icon

CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19536KCS SLPS485B JANUARY 2014 REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Tota... See More ⇒

 7.2. Size:504K  texas
csd19537q3.pdf pdf_icon

CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19537Q3 SLPS549 AUGUST 2015 CSD19537Q3 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 16 nC Pb-Free ... See More ⇒

Detailed specifications: CSD18540Q5B , CSD18542KCS , CSD18563Q5A , CSD19501KCS , CSD19502Q5B , CSD19503KCS , CSD19505KCS , CSD19506KCS , IRFP460 , CSD19531Q5A , CSD19532KTT , CSD19532Q5B , CSD19533KCS , CSD19533Q5A , CSD19534KCS , CSD19534Q5A , CSD19535KCS .

History: CSD19506KCS

Keywords - CSD19531KCS MOSFET specs

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