CSD19531KCS Datasheet. Specs and Replacement

Type Designator: CSD19531KCS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm

Package: TO-220

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CSD19531KCS substitution

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CSD19531KCS datasheet

 ..1. Size:398K  texas
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CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19531KCS SLPS407B SEPTEMBER 2013 REVISED JULY 2014 CSD19531KCS 100-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total... See More ⇒

 6.1. Size:1281K  texas
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CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19531Q5A SLPS406B SEPTEMBER 2013 REVISED MAY 2014 CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total... See More ⇒

 7.1. Size:404K  texas
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CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19536KCS SLPS485B JANUARY 2014 REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Tota... See More ⇒

 7.2. Size:504K  texas
csd19537q3.pdf pdf_icon

CSD19531KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19537Q3 SLPS549 AUGUST 2015 CSD19537Q3 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 16 nC Pb-Free ... See More ⇒

Detailed specifications: CSD18540Q5B, CSD18542KCS, CSD18563Q5A, CSD19501KCS, CSD19502Q5B, CSD19503KCS, CSD19505KCS, CSD19506KCS, 50N06, CSD19531Q5A, CSD19532KTT, CSD19532Q5B, CSD19533KCS, CSD19533Q5A, CSD19534KCS, CSD19534Q5A, CSD19535KCS

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