All MOSFET. CSD22202W15 Datasheet

 

CSD22202W15 Datasheet and Replacement


   Type Designator: CSD22202W15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 588 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: DSBGA
 

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CSD22202W15 Datasheet (PDF)

 ..1. Size:1426K  texas
 csd22202w15.pdf pdf_icon

CSD22202W15

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD22202W15SLPS431B JUNE 2013 REVISED DECEMBER 2014CSD22202W15 P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 8 V Pb FreeQg Gate Charge Total (4.5

 7.1. Size:1055K  texas
 csd22204w.pdf pdf_icon

CSD22202W15

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD22204WSLPS559 MARCH 2015CSD22204W 8 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 8 V Pb FreeQg Gate Charge Total (4.5 V) 18.9 nC Gate ES

Datasheet: CSD19533Q5A , CSD19534KCS , CSD19534Q5A , CSD19535KCS , CSD19535KTT , CSD19536KCS , CSD19536KTT , CSD19537Q3 , IRFP250N , CSD22204W , CSD23201W10 , CSD23202W10 , CSD23203W , CSD23381F4 , CSD23382F4 , CSD25201W15 , CSD25202W15 .

History: IRC8305

Keywords - CSD22202W15 MOSFET datasheet

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