CSD22202W15 Specs and Replacement
Type Designator: CSD22202W15
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
Qg ⓘ - Total Gate Charge: 6.5 nC
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 588 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
Package: DSBGA
CSD22202W15 substitution
- MOSFET ⓘ Cross-Reference Search
CSD22202W15 datasheet
csd22202w15.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD22202W15 SLPS431B JUNE 2013 REVISED DECEMBER 2014 CSD22202W15 P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low Resistance TA = 25 C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mm VDS Drain-to-Source Voltage 8 V Pb Free Qg Gate Charge Total ( 4.5 ... See More ⇒
csd22204w.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD22204W SLPS559 MARCH 2015 CSD22204W 8 V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low Resistance TA = 25 C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mm VDS Drain-to-Source Voltage 8 V Pb Free Qg Gate Charge Total ( 4.5 V) 18.9 nC Gate ES... See More ⇒
Detailed specifications: CSD19533Q5A , CSD19534KCS , CSD19534Q5A , CSD19535KCS , CSD19535KTT , CSD19536KCS , CSD19536KTT , CSD19537Q3 , IRFB4115 , CSD22204W , CSD23201W10 , CSD23202W10 , CSD23203W , CSD23381F4 , CSD23382F4 , CSD25201W15 , CSD25202W15 .
Keywords - CSD22202W15 MOSFET specs
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