All MOSFET. CSD83325L Datasheet

 

CSD83325L MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD83325L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.4 nC
   trⓘ - Rise Time: 353 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0119 Ohm
   Package: PICOSTAR

 CSD83325L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD83325L Datasheet (PDF)

 ..1. Size:1175K  texas
 csd83325l.pdf

CSD83325L CSD83325L

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD83325LSLPS494 NOVEMBER 2014CSD83325L 12 V Dual N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Common Drain ConfigurationTA = 25C TYPICAL VALUE UNIT Low On ResistanceVS1S2 Source-to-Source Voltage 12 V Small Footprint of 2.2 mm 1.15 mmQg Gate Charge Tota

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3482-Z

 

 
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