CSD83325L Specs and Replacement

Type Designator: CSD83325L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 353 nS

Cossⓘ - Output Capacitance: 187 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0119 Ohm

Package: PICOSTAR

CSD83325L substitution

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CSD83325L datasheet

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CSD83325L

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD83325L SLPS494 NOVEMBER 2014 CSD83325L 12 V Dual N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Common Drain Configuration TA = 25 C TYPICAL VALUE UNIT Low On Resistance VS1S2 Source-to-Source Voltage 12 V Small Footprint of 2.2 mm 1.15 mm Qg Gate Charge Tota... See More ⇒

Detailed specifications: CSD25483F4, CSD25484F4, CSD75204W15, CSD75205W1015, CSD75207W15, CSD75208W1015, CSD75211W1723, CSD75301W1015, AON6380, CSD85301Q2, CSD85312Q3E, CSD86311W1723, CSD86330Q3D, CSD86350Q5D, CSD87312Q3E, CSD87330Q3D, CSD87331Q3D

Keywords - CSD83325L MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs