CSD85301Q2 PDF and Equivalents Search

 

CSD85301Q2 Specs and Replacement

Type Designator: CSD85301Q2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SON2X2

CSD85301Q2 substitution

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CSD85301Q2 datasheet

 ..1. Size:1160K  texas
 csd85301q2.pdf pdf_icon

CSD85301Q2

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD85301Q2 SLPS521 DECEMBER 2014 CSD85301Q2 20 V Dual N-Channel NexFET Power MOSFETs . 1 Features 1 Low On-Resistance Product Summary Dual Independent MOSFETs TA = 25 C TYPICAL VALUE UNIT Space Saving SON 2 2 mm Plastic Package VDS Drain-to-Source Voltage 20 V Qg Gate Charg... See More ⇒

 8.1. Size:1459K  texas
 csd85312q3e.pdf pdf_icon

CSD85301Q2

CSD85312Q3E www.ti.com SLPS457 NOVEMBER 2013 Dual 20 V N-Channel NexFET Power MOSFETs . 1 FEATURES PRODUCT SUMMARY Common Source Connection TA = 25 C TYPICAL VALUE UNIT Low Drain to Drain On-Resistance VDS Drain to Source Voltage 20 V Space Saving SON 3.3 x 3.3 mm Plastic Qg Gate Charge Total (4.5 V) 11.7 nC Package Qgd Gate Charge Gate to Drain 1.6 nC VGS = 4.... See More ⇒

Detailed specifications: CSD25484F4 , CSD75204W15 , CSD75205W1015 , CSD75207W15 , CSD75208W1015 , CSD75211W1723 , CSD75301W1015 , CSD83325L , IRF530 , CSD85312Q3E , CSD86311W1723 , CSD86330Q3D , CSD86350Q5D , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87334Q3D .

History: 2SK3568

Keywords - CSD85301Q2 MOSFET specs

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