CSD85301Q2 Datasheet and Replacement
Type Designator: CSD85301Q2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 68 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SON2X2
CSD85301Q2 substitution
CSD85301Q2 Datasheet (PDF)
csd85301q2.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD85301Q2SLPS521 DECEMBER 2014CSD85301Q2 20 V Dual N-Channel NexFET Power MOSFETs.1 Features1 Low On-ResistanceProduct Summary Dual Independent MOSFETsTA = 25C TYPICAL VALUE UNIT Space Saving SON 2 2 mm Plastic PackageVDS Drain-to-Source Voltage 20 VQg Gate Charg
csd85312q3e.pdf

CSD85312Q3Ewww.ti.com SLPS457 NOVEMBER 2013Dual 20 V N-Channel NexFET Power MOSFETs.1FEATURESPRODUCT SUMMARY Common Source ConnectionTA = 25C TYPICAL VALUE UNIT Low Drain to Drain On-ResistanceVDS Drain to Source Voltage 20 V Space Saving SON 3.3 x 3.3 mm PlasticQg Gate Charge Total (4.5 V) 11.7 nCPackageQgd Gate Charge Gate to Drain 1.6 nCVGS = 4.
Datasheet: CSD25484F4 , CSD75204W15 , CSD75205W1015 , CSD75207W15 , CSD75208W1015 , CSD75211W1723 , CSD75301W1015 , CSD83325L , AO4407 , CSD85312Q3E , CSD86311W1723 , CSD86330Q3D , CSD86350Q5D , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87334Q3D .
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