All MOSFET. CSD85301Q2 Datasheet

 

CSD85301Q2 Datasheet and Replacement


   Type Designator: CSD85301Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.2 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SON2X2
 

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CSD85301Q2 Datasheet (PDF)

 ..1. Size:1160K  texas
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CSD85301Q2

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD85301Q2SLPS521 DECEMBER 2014CSD85301Q2 20 V Dual N-Channel NexFET Power MOSFETs.1 Features1 Low On-ResistanceProduct Summary Dual Independent MOSFETsTA = 25C TYPICAL VALUE UNIT Space Saving SON 2 2 mm Plastic PackageVDS Drain-to-Source Voltage 20 VQg Gate Charg

 8.1. Size:1459K  texas
 csd85312q3e.pdf pdf_icon

CSD85301Q2

CSD85312Q3Ewww.ti.com SLPS457 NOVEMBER 2013Dual 20 V N-Channel NexFET Power MOSFETs.1FEATURESPRODUCT SUMMARY Common Source ConnectionTA = 25C TYPICAL VALUE UNIT Low Drain to Drain On-ResistanceVDS Drain to Source Voltage 20 V Space Saving SON 3.3 x 3.3 mm PlasticQg Gate Charge Total (4.5 V) 11.7 nCPackageQgd Gate Charge Gate to Drain 1.6 nCVGS = 4.

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