All MOSFET. CSD85312Q3E Datasheet

 

CSD85312Q3E Datasheet and Replacement


   Type Designator: CSD85312Q3E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 492 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0124 Ohm
   Package: SON3.3X3.3
 

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CSD85312Q3E Datasheet (PDF)

 ..1. Size:1459K  texas
 csd85312q3e.pdf pdf_icon

CSD85312Q3E

CSD85312Q3Ewww.ti.com SLPS457 NOVEMBER 2013Dual 20 V N-Channel NexFET Power MOSFETs.1FEATURESPRODUCT SUMMARY Common Source ConnectionTA = 25C TYPICAL VALUE UNIT Low Drain to Drain On-ResistanceVDS Drain to Source Voltage 20 V Space Saving SON 3.3 x 3.3 mm PlasticQg Gate Charge Total (4.5 V) 11.7 nCPackageQgd Gate Charge Gate to Drain 1.6 nCVGS = 4.

 8.1. Size:1160K  texas
 csd85301q2.pdf pdf_icon

CSD85312Q3E

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD85301Q2SLPS521 DECEMBER 2014CSD85301Q2 20 V Dual N-Channel NexFET Power MOSFETs.1 Features1 Low On-ResistanceProduct Summary Dual Independent MOSFETsTA = 25C TYPICAL VALUE UNIT Space Saving SON 2 2 mm Plastic PackageVDS Drain-to-Source Voltage 20 VQg Gate Charg

Datasheet: CSD75204W15 , CSD75205W1015 , CSD75207W15 , CSD75208W1015 , CSD75211W1723 , CSD75301W1015 , CSD83325L , CSD85301Q2 , IRLB4132 , CSD86311W1723 , CSD86330Q3D , CSD86350Q5D , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87334Q3D , CSD87350Q5D .

History: AFP1433 | SI1031R | HGB195N15S

Keywords - CSD85312Q3E MOSFET datasheet

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