All MOSFET. K2837 Datasheet

 

K2837 MOSFET. Datasheet pdf. Equivalent


   Type Designator: K2837
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 271 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-247

 K2837 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

K2837 Datasheet (PDF)

 ..1. Size:498K  winsemi
 k2837.pdf

K2837 K2837

K2837K2837K2837K2837Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power field ef

 0.1. Size:293K  1
 ttk2837.pdf

K2837 K2837

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,

 0.2. Size:426K  toshiba
 2sk2837.pdf

K2837 K2837

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V

 0.3. Size:572K  winsemi
 k2837b.pdf

K2837 K2837

K2837BK2837BK2837BK2837BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures24A,500V,R (Max0.19)@V =10V DS(on) GS Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2N7002BKV

 

 
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