K2837 - аналоги, даташиты, параметры транзистора

K2837 Datasheet (PDF)

..1. Size:498K winsemi
k2837.pdf pdf_icon

K2837K2837K2837K2837Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power field ef

0.1. Size:293K 1
ttk2837.pdf pdf_icon

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,

0.2. Size:426K toshiba
2sk2837.pdf pdf_icon

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V

0.3. Size:572K winsemi
k2837b.pdf pdf_icon

K2837BK2837BK2837BK2837BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures24A,500V,R (Max0.19)@V =10V DS(on) GS Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power

Другие MOSFET... CSD88539ND , CSD9024 , K2611 , K2611B , K2611S , K2611SB , K2698 , K2698B , IRF2807 , K2837B , KDB15N50 , KDB2532 , KDB2552 , KDB2570 , KDB2572 , KDB2670 , KDB3632 .