K2837B MOSFET Datasheet: N-Ch, 500V, 24A. Full specification with pinout and replacement list

K2837B Specs and Replacement

Type Designator: K2837B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 271 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-3PB

K2837B substitution

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K2837B datasheet

..1. Size:572K winsemi
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K2837B K2837B K2837B K2837B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 24A,500V,R (Max0.19 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power... See More ⇒

9.1. Size:293K 1
ttk2837.pdf pdf_icon

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source on-resistance RDS(ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (VDS = 500 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V,... See More ⇒

9.2. Size:426K toshiba
2sk2837.pdf pdf_icon

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.21 (typ.) (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V... See More ⇒

9.3. Size:498K winsemi
k2837.pdf pdf_icon

K2837 K2837 K2837 K2837 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 24A,500V,RDS(on)(Max0.19 )@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power field ef... See More ⇒

Detailed specifications: CSD9024, K2611, K2611B, K2611S, K2611SB, K2698, K2698B, K2837, IRFZ24N, KDB15N50, KDB2532, KDB2552, KDB2570, KDB2572, KDB2670, KDB3632, KDB3652