KDB15N50 Specs and Replacement
Type Designator: KDB15N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-263
KDB15N50 substitution
- MOSFET ⓘ Cross-Reference Search
KDB15N50 datasheet
kdb15n50.pdf
SMD Type MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features TO-263 Unit mm Low Gate Charge Qg results in Simple Drive Requirement +0.2 4.57-0.2 +0.1 Improved Gate, Avalanche and High Reapplied dv/dt 1.27-0.1 Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance +0.1 0.1max 1.27-0.1 Improved Switching Speed with Low EMI +0.1 0.81-0.1 2.... See More ⇒
Detailed specifications: K2611 , K2611B , K2611S , K2611SB , K2698 , K2698B , K2837 , K2837B , 2N60 , KDB2532 , KDB2552 , KDB2570 , KDB2572 , KDB2670 , KDB3632 , KDB3652 , KDB3672 .
History: FDU5N50NZTU
Keywords - KDB15N50 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDU5N50NZTU
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