All MOSFET. KDB15N50 Datasheet

 

KDB15N50 Datasheet and Replacement


   Type Designator: KDB15N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-263
 

 KDB15N50 substitution

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KDB15N50 Datasheet (PDF)

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KDB15N50

SMD Type MOSFETN-Channel SMPS Power MOSFETKDB15N50(FDB15N50)FeaturesTO-263Unit: mmLow Gate Charge Qg results in Simple Drive Requirement+0.24.57-0.2+0.1Improved Gate, Avalanche and High Reapplied dv/dt1.27-0.1RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input Capacitance+0.10.1max1.27-0.1Improved Switching Speed with Low EMI+0.10.81-0.12.

Datasheet: K2611 , K2611B , K2611S , K2611SB , K2698 , K2698B , K2837 , K2837B , IRF830 , KDB2532 , KDB2552 , KDB2570 , KDB2572 , KDB2670 , KDB3632 , KDB3652 , KDB3672 .

History: FQPF5N50CT | SWMN15N50D

Keywords - KDB15N50 MOSFET datasheet

 KDB15N50 cross reference
 KDB15N50 equivalent finder
 KDB15N50 lookup
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 KDB15N50 replacement

 

 
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