KDB2670 PDF and Equivalents Search

 

KDB2670 Specs and Replacement

Type Designator: KDB2670

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-263

KDB2670 substitution

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KDB2670 datasheet

 ..1. Size:50K  kexin
 kdb2670.pdf pdf_icon

KDB2670

SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features TO-263 Unit mm 19 A, 200 V. RDS(ON) =130 m @VGS =10V +0.2 4.57-0.2 +0.1 1.27-0.1 Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely +0.1 low RDS(ON) 0.1max 1.27-0.1 High power and current handling capability +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.... See More ⇒

Detailed specifications: K2698B, K2837, K2837B, KDB15N50, KDB2532, KDB2552, KDB2570, KDB2572, IRFB31N20D, KDB3632, KDB3652, KDB3672, KDB3682, KDB4020P, KDB5690, KDB6030L, KDB7045L

Keywords - KDB2670 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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