All MOSFET. KDB2670 Datasheet

 

KDB2670 Datasheet and Replacement


   Type Designator: KDB2670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-263
 

 KDB2670 substitution

   - MOSFET ⓘ Cross-Reference Search

 

KDB2670 Datasheet (PDF)

 ..1. Size:50K  kexin
 kdb2670.pdf pdf_icon

KDB2670

SMD Type MOSFET200V N-Channel PowerTrench MOSFETKDB2670(FDB2670)Features TO-263Unit: mm19 A, 200 V. RDS(ON) =130 m @VGS =10V+0.24.57-0.2+0.11.27-0.1Low gate charge (27 nC typical)Fast switching speedHigh performance trench technology for extremely+0.1low RDS(ON) 0.1max1.27-0.1High power and current handling capability+0.10.81-0.12.54 1Gate+0.22Drain2.

Datasheet: K2698B , K2837 , K2837B , KDB15N50 , KDB2532 , KDB2552 , KDB2570 , KDB2572 , IRF730 , KDB3632 , KDB3652 , KDB3672 , KDB3682 , KDB4020P , KDB5690 , KDB6030L , KDB7045L .

History: 2N50

Keywords - KDB2670 MOSFET datasheet

 KDB2670 cross reference
 KDB2670 equivalent finder
 KDB2670 lookup
 KDB2670 substitution
 KDB2670 replacement

 

 
Back to Top

 


 
.