KDB4020P PDF and Equivalents Search

 

KDB4020P Specs and Replacement

Type Designator: KDB4020P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO-263

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KDB4020P datasheet

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KDB4020P

SMD Type MOSFET P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 -16 A, -20 V. RDS(on) =0.08 @VGS =-4.5V RDS(on) =0.11 @VGS =-2.5 V. Critical DC electrical parameters specified at elevated +0.1 0.1max temperature. 1.27-0.1 High density cell design for extremely low RDS(on). +0.1 0.81-0... See More ⇒

Detailed specifications: KDB2552, KDB2570, KDB2572, KDB2670, KDB3632, KDB3652, KDB3672, KDB3682, IRFZ46N, KDB5690, KDB6030L, KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L

Keywords - KDB4020P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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