All MOSFET. KDB4020P Datasheet

 

KDB4020P Datasheet and Replacement


   Type Designator: KDB4020P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-263
 

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KDB4020P Datasheet (PDF)

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KDB4020P

SMD Type MOSFETP-Channel 2.5V Specified EnhancementMode Field Effect TransistorKDB4020P(FDB4020P)TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.1-16 A, -20 V. RDS(on) =0.08@VGS =-4.5VRDS(on) =0.11@VGS =-2.5 V.Critical DC electrical parameters specified at elevated+0.10.1maxtemperature.1.27-0.1High density cell design for extremely low RDS(on).+0.10.81-0

Datasheet: KDB2552 , KDB2570 , KDB2572 , KDB2670 , KDB3632 , KDB3652 , KDB3672 , KDB3682 , STP65NF06 , KDB5690 , KDB6030L , KDB7045L , KDC6020C , KDD2572 , KDD3670 , KDD3680 , KDD6030L .

History: KDB3672

Keywords - KDB4020P MOSFET datasheet

 KDB4020P cross reference
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