All MOSFET. KDB5690 Datasheet

 

KDB5690 Datasheet and Replacement


   Type Designator: KDB5690
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO-263
 

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KDB5690 Datasheet (PDF)

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KDB5690

SMD Type ICSMD Type TransistorsN-Channel PowerTrenchTMMOSFETKDB5690TO-263Unit: mm4.57+0.2-0.2+0.11.27-0.1Features32 A, 60 V. RDS(ON) = 0.027 @VGS =10VRDS(ON) = 0.032 @VGS =6VCritical DC electrical parameters specified at+0.10.1max1.27-0.1elevated temperature.Rugged internal source-drain diode can eliminate the0.81+0.1-0.1need for an external Zener diode

Datasheet: KDB2570 , KDB2572 , KDB2670 , KDB3632 , KDB3652 , KDB3672 , KDB3682 , KDB4020P , P0903BDG , KDB6030L , KDB7045L , KDC6020C , KDD2572 , KDD3670 , KDD3680 , KDD6030L , KDR8702H .

History: STH7N90FI | HUF75329G3 | FDG6301NF085 | WMK80N08TS | JMSH1010AC

Keywords - KDB5690 MOSFET datasheet

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