All MOSFET. KDB5690 Datasheet

 

KDB5690 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KDB5690
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO-263

 KDB5690 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KDB5690 Datasheet (PDF)

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 kdb5690.pdf

KDB5690 KDB5690

SMD Type ICSMD Type TransistorsN-Channel PowerTrenchTMMOSFETKDB5690TO-263Unit: mm4.57+0.2-0.2+0.11.27-0.1Features32 A, 60 V. RDS(ON) = 0.027 @VGS =10VRDS(ON) = 0.032 @VGS =6VCritical DC electrical parameters specified at+0.10.1max1.27-0.1elevated temperature.Rugged internal source-drain diode can eliminate the0.81+0.1-0.1need for an external Zener diode

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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