KDB5690 PDF and Equivalents Search

 

KDB5690 Specs and Replacement

Type Designator: KDB5690

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO-263

KDB5690 substitution

- MOSFET ⓘ Cross-Reference Search

 

KDB5690 datasheet

 ..1. Size:58K  kexin
 kdb5690.pdf pdf_icon

KDB5690

SMD Type IC SMD Type Transistors N-Channel PowerTrenchTMMOSFET KDB5690 TO-263 Unit mm 4.57+0.2 -0.2 +0.1 1.27-0.1 Features 32 A, 60 V. RDS(ON) = 0.027 @VGS =10V RDS(ON) = 0.032 @VGS =6V Critical DC electrical parameters specified at +0.1 0.1max 1.27-0.1 elevated temperature. Rugged internal source-drain diode can eliminate the 0.81+0.1 -0.1 need for an external Zener diode... See More ⇒

Detailed specifications: KDB2570, KDB2572, KDB2670, KDB3632, KDB3652, KDB3672, KDB3682, KDB4020P, IRF830, KDB6030L, KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L, KDR8702H

Keywords - KDB5690 MOSFET specs

 KDB5690 cross reference

 KDB5690 equivalent finder

 KDB5690 pdf lookup

 KDB5690 substitution

 KDB5690 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.