All MOSFET. KDB6030L Datasheet

 

KDB6030L Datasheet and Replacement


   Type Designator: KDB6030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-263
 

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KDB6030L Datasheet (PDF)

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KDB6030L

SMD Type ICSMD Type TransistorsN-Channel Logic Level EnhancementMode Field Effect TransistorKDB6030LTO-263Unit: mm4.57+0.2-0.2+0.1Features1.27-0.152A, 30 V. RDS(ON) =0.0135 @VGS =10VRDS(ON) =0.020 @VGS =4.5 VLow gate charge (typical 34 nC).+0.10.1maxLow Crss (typical 175 pF).1.27-0.1Fast switching speed.0.81+0.1-0.12.541gate1Gate2.54+0.2 +0.2-

Datasheet: KDB2572 , KDB2670 , KDB3632 , KDB3652 , KDB3672 , KDB3682 , KDB4020P , KDB5690 , 60N06 , KDB7045L , KDC6020C , KDD2572 , KDD3670 , KDD3680 , KDD6030L , KDR8702H , KDS2572 .

History: IXFH6N100 | CPH6445 | NTD4960N

Keywords - KDB6030L MOSFET datasheet

 KDB6030L cross reference
 KDB6030L equivalent finder
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