All MOSFET. KDB6030L Datasheet

 

KDB6030L MOSFET. Datasheet pdf. Equivalent


   Type Designator: KDB6030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-263

 KDB6030L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KDB6030L Datasheet (PDF)

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 kdb6030l.pdf

KDB6030L KDB6030L

SMD Type ICSMD Type TransistorsN-Channel Logic Level EnhancementMode Field Effect TransistorKDB6030LTO-263Unit: mm4.57+0.2-0.2+0.1Features1.27-0.152A, 30 V. RDS(ON) =0.0135 @VGS =10VRDS(ON) =0.020 @VGS =4.5 VLow gate charge (typical 34 nC).+0.10.1maxLow Crss (typical 175 pF).1.27-0.1Fast switching speed.0.81+0.1-0.12.541gate1Gate2.54+0.2 +0.2-

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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