KDB6030L MOSFET Datasheet: N-Ch, 30V, 52A. Full specification with pinout and replacement list

KDB6030L Specs and Replacement

Type Designator: KDB6030L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO-263

KDB6030L substitution

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KDB6030L datasheet

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SMD Type IC SMD Type Transistors N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L TO-263 Unit mm 4.57+0.2 -0.2 +0.1 Features 1.27-0.1 52A, 30 V. RDS(ON) =0.0135 @VGS =10V RDS(ON) =0.020 @VGS =4.5 V Low gate charge (typical 34 nC). +0.1 0.1max Low Crss (typical 175 pF). 1.27-0.1 Fast switching speed. 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -... See More ⇒

Detailed specifications: KDB2572, KDB2670, KDB3632, KDB3652, KDB3672, KDB3682, KDB4020P, KDB5690, IRLB3034, KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L, KDR8702H, KDS2572