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KDD2572 Specs and Replacement

Type Designator: KDD2572

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: TO-252

KDD2572 substitution

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KDD2572 datasheet

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KDD2572

SMD Type IC SMD Type Transistors N-Channel PowerTrench MOSFET KDD2572 TO-252 Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Features +0.2 5.30-0.2 0.50+0.8 -0.7 rDS(ON) = 45m (Typ.), VGS = 10V, ID =9A Qg(tot) = 26nC (Typ.), VGS = 10V 0.127 Low Miller Charge 0.80+0.1 max -0.1 Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) 1. Gate 2.3 0.60+0.1 -0.1 Qualified ... See More ⇒

Detailed specifications: KDB3652, KDB3672, KDB3682, KDB4020P, KDB5690, KDB6030L, KDB7045L, KDC6020C, AON7403, KDD3670, KDD3680, KDD6030L, KDR8702H, KDS2572, KDS3512, KDS3601, KDS3912

Keywords - KDD2572 MOSFET specs

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