KDD3670 MOSFET Datasheet: N-Ch, 100V, 34A. Full specification with pinout and replacement list

KDD3670 Specs and Replacement

Type Designator: KDD3670

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-252

KDD3670 substitution

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KDD3670 datasheet

..1. Size:62K kexin
kdd3670.pdf pdf_icon

SMD Type IC SMD Type Transistors 100V N-Channel PowerTrench MOSFET KDD3670 TO-252 Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 Features 34 A, 100 V. RDS(ON) = 32m @VGS =10V RDS(ON) = 35m @VGS =6V 0.127 Low gate charge (57 nC typical) 0.80+0.1 max -0.1 Fast switching speed High performance trench technology for extremely low RDS(ON) 1. Gate 2.3 0.60+0.1... See More ⇒

9.1. Size:62K kexin
kdd3680.pdf pdf_icon

SMD Type IC SMD Type Transistors 100V N-Channel Power Trench MOSFET KDD3680 TO-252 Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 Features 25 A, 100 V. RDS(ON) = 46m @VGS =10 V RDS(ON) = 51m @VGS =6V 0.127 Low gate charge (38 nC typical) 0.80+0.1 max -0.1 Fast switching speed High performance trench technology for extremely low RDS(ON) 1. Gate 2.3 0.60+0... See More ⇒

Detailed specifications: KDB3672, KDB3682, KDB4020P, KDB5690, KDB6030L, KDB7045L, KDC6020C, KDD2572, K2611, KDD3680, KDD6030L, KDR8702H, KDS2572, KDS3512, KDS3601, KDS3912, KDS4470