All MOSFET. KDD6030L Datasheet

 

KDD6030L Datasheet and Replacement


   Type Designator: KDD6030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TO-252
 

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KDD6030L Datasheet (PDF)

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KDD6030L

SMD Type ICSMD Type Transistors30V N-Channel Power Trench MOSFETKDD6030LTO-252Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1Features+0.25.30-0.2 0.50+0.8-0.712 A, 30 V. RDS(ON) = 14.5m @VGS =10VRDS(ON) =21m @VGS =4.5 VLow gate charge0.1270.80+0.1 max-0.1Fast switching speedHigh performance trench technology for extremely low RDS(ON)1. Gate2.3 0.60+0.1-0.14.60

Datasheet: KDB4020P , KDB5690 , KDB6030L , KDB7045L , KDC6020C , KDD2572 , KDD3670 , KDD3680 , MMD60R360PRH , KDR8702H , KDS2572 , KDS3512 , KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 .

History: 1N50

Keywords - KDD6030L MOSFET datasheet

 KDD6030L cross reference
 KDD6030L equivalent finder
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