KDD6030L PDF and Equivalents Search

 

KDD6030L Specs and Replacement

Type Designator: KDD6030L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: TO-252

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KDD6030L datasheet

 ..1. Size:69K  kexin
 kdd6030l.pdf pdf_icon

KDD6030L

SMD Type IC SMD Type Transistors 30V N-Channel Power Trench MOSFET KDD6030L TO-252 Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Features +0.2 5.30-0.2 0.50+0.8 -0.7 12 A, 30 V. RDS(ON) = 14.5m @VGS =10V RDS(ON) =21m @VGS =4.5 V Low gate charge 0.127 0.80+0.1 max -0.1 Fast switching speed High performance trench technology for extremely low RDS(ON) 1. Gate 2.3 0.60+0.1 -0.1 4.60... See More ⇒

Detailed specifications: KDB4020P, KDB5690, KDB6030L, KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, RU7088R, KDR8702H, KDS2572, KDS3512, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559

Keywords - KDD6030L MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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