KDR8702H Specs and Replacement
Type Designator: KDR8702H
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP-8
KDR8702H substitution
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KDR8702H datasheet
kdr8702h.pdf
SMD Type IC SMD Type Transistors 20V N & P-Channel PowerTrench MOSFET KDR8702H Features N-Ch RDS(ON) = 54m @VGS =2.5 V 3.6A, 20V RDS(ON) =38m @VGS =4.5V P-Ch RDS(ON) = 110 m @VGS=- 2.5V -2.6 A, -20 V RDS(ON) =80m @VGS =-4.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit D... See More ⇒
Detailed specifications: KDB5690, KDB6030L, KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L, MMIS60R580P, KDS2572, KDS3512, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953
Keywords - KDR8702H MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRFB4110GPBF | IRFB4137PBF
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