All MOSFET. KDR8702H Datasheet

 

KDR8702H Datasheet and Replacement


   Type Designator: KDR8702H
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP-8
 

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KDR8702H Datasheet (PDF)

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KDR8702H

SMD Type ICSMD Type Transistors20V N & P-Channel PowerTrench MOSFETKDR8702HFeaturesN-Ch RDS(ON) = 54m @VGS =2.5 V3.6A, 20V RDS(ON) =38m @VGS =4.5VP-Ch RDS(ON) = 110 m @VGS=- 2.5V-2.6 A, -20 V RDS(ON) =80m @VGS =-4.5VFast switching speedHigh performance trench technology for extremely low RDS(ON)Absolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitD

Datasheet: KDB5690 , KDB6030L , KDB7045L , KDC6020C , KDD2572 , KDD3670 , KDD3680 , KDD6030L , 2N7002 , KDS2572 , KDS3512 , KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , KDS4953 .

History: 2N50

Keywords - KDR8702H MOSFET datasheet

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 KDR8702H equivalent finder
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