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KDS2572 Specs and Replacement

Type Designator: KDS2572

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: SOP-8

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KDS2572 datasheet

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 kds2572.pdf pdf_icon

KDS2572

SMD Type IC SMD Type IC N-Channel UltraFET Trench MOSFET KDS2572 Features RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 150 V Gate to Source Voltage VGS 20 V Drain Current Continuous (TC =25 ) *1 4.9 A... See More ⇒

Detailed specifications: KDB6030L, KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L, KDR8702H, AOD4184A, KDS3512, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670

Keywords - KDS2572 MOSFET specs

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