All MOSFET. KDS2572 Datasheet

 

KDS2572 Datasheet and Replacement


   Type Designator: KDS2572
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: SOP-8
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KDS2572 Datasheet (PDF)

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KDS2572

SMD Type ICSMD Type ICN-Channel UltraFET Trench MOSFETKDS2572FeaturesRDS(ON) = 0.040 (Typ.), VGS = 10VQg(TOT) = 29nC (Typ.), VGS = 10VLow QRR Body DiodeMaximized efficiency at high frequenciesUIS RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 150 VGate to Source Voltage VGS 20 VDrain Current Continuous (TC =25 ) *1 4.9 A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 19N10L-TM3-T | 1N70Z | AP30H80Q | R6006JND3 | 2SK804 | HMS10N60I | TPC70R450C

Keywords - KDS2572 MOSFET datasheet

 KDS2572 cross reference
 KDS2572 equivalent finder
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