All MOSFET. KDS3912 Datasheet

 

KDS3912 Datasheet and Replacement


   Type Designator: KDS3912
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOP-8
 

 KDS3912 substitution

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KDS3912 Datasheet (PDF)

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KDS3912

SMD Type ICSMD Type IC100V Dual N-Channel PowerTrench MOSFETKDS3912Features3 A, 100 V. RDS(ON) = 125m @VGS =10 VRDS(ON) = 135m @VGS =6 VLow gate charge (14 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltag

Datasheet: KDD2572 , KDD3670 , KDD3680 , KDD6030L , KDR8702H , KDS2572 , KDS3512 , KDS3601 , 5N50 , KDS4470 , KDS4501H , KDS4559 , KDS4953 , KDS5670 , KDS6375 , KDS6685 , KDS6910 .

History: H5N2522FP-E0

Keywords - KDS3912 MOSFET datasheet

 KDS3912 cross reference
 KDS3912 equivalent finder
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