KDS3912 Specs and Replacement
Type Designator: KDS3912
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SOP-8
KDS3912 substitution
- MOSFET ⓘ Cross-Reference Search
KDS3912 datasheet
kds3912.pdf
SMD Type IC SMD Type IC 100V Dual N-Channel PowerTrench MOSFET KDS3912 Features 3 A, 100 V. RDS(ON) = 125m @VGS =10 V RDS(ON) = 135m @VGS =6 V Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltag... See More ⇒
Detailed specifications: KDD2572, KDD3670, KDD3680, KDD6030L, KDR8702H, KDS2572, KDS3512, KDS3601, IRFP064N, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375, KDS6685, KDS6910
Keywords - KDS3912 MOSFET specs
KDS3912 cross reference
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