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KDS4953 Specs and Replacement

Type Designator: KDS4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOP-8

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KDS4953 datasheet

 ..1. Size:62K  kexin
 kds4953.pdf pdf_icon

KDS4953

SMD Type IC SMD Type IC Dual 30V P-Channel PowerTrench MOSFET KDS4953 Features -5 A, -30 V. RDS(ON) = 55m @VGS = -10V RDS(ON) = 95m @VGS =-4.5V Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed 1 Source 1 3 Source 2 2 Gate 1 4 Gate 2 7,8 Drain 1 5,6 Drain 2 Absolute Maxim... See More ⇒

Detailed specifications: KDR8702H, KDS2572, KDS3512, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, IRF3205, KDS5670, KDS6375, KDS6685, KDS6910, KDS8333C, KDS8928A, KDS8958, KDS9952A

Keywords - KDS4953 MOSFET specs

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