KDS4953 MOSFET. Datasheet pdf. Equivalent
Type Designator: KDS4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 132 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP-8
KDS4953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KDS4953 Datasheet (PDF)
..1. Size:62K kexin
kds4953.pdf
kds4953.pdf
SMD Type ICSMD Type ICDual 30V P-Channel PowerTrench MOSFETKDS4953Features-5 A, -30 V. RDS(ON) = 55m @VGS = -10VRDS(ON) = 95m @VGS =-4.5VLow gate charge(6nC typical)High performance trench technology for extremely low RDS(ON)High power and current handling capabilityFast switching speed1: Source 13: Source 22: Gate 1 4: Gate 27,8: Drain 1 5,6: Drain 2Absolute Maxim
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
