All MOSFET. KDS4953 Datasheet

 

KDS4953 Datasheet and Replacement


   Type Designator: KDS4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP-8
 

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KDS4953 Datasheet (PDF)

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KDS4953

SMD Type ICSMD Type ICDual 30V P-Channel PowerTrench MOSFETKDS4953Features-5 A, -30 V. RDS(ON) = 55m @VGS = -10VRDS(ON) = 95m @VGS =-4.5VLow gate charge(6nC typical)High performance trench technology for extremely low RDS(ON)High power and current handling capabilityFast switching speed1: Source 13: Source 22: Gate 1 4: Gate 27,8: Drain 1 5,6: Drain 2Absolute Maxim

Datasheet: KDR8702H , KDS2572 , KDS3512 , KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , IRF3205 , KDS5670 , KDS6375 , KDS6685 , KDS6910 , KDS8333C , KDS8928A , KDS8958 , KDS9952A .

History: STH9N80FI

Keywords - KDS4953 MOSFET datasheet

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