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KDS6375 Specs and Replacement

Type Designator: KDS6375

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP-8

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KDS6375 datasheet

 ..1. Size:66K  kexin
 kds6375.pdf pdf_icon

KDS6375

SMD Type IC SMD Type IC P-Channel 2.5V Specified PowerTrench MOSFET KDS6375 Features -8 A, -20 V. RDS(ON) = 24m @VGS =-4.5V RDS(ON) = 32m @VGS =-2.5V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS -20 V Gat... See More ⇒

Detailed specifications: KDS3512, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, IRF840, KDS6685, KDS6910, KDS8333C, KDS8928A, KDS8958, KDS9952A, KDV303N, KDW2503N

Keywords - KDS6375 MOSFET specs

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