All MOSFET. KDS6375 Datasheet

 

KDS6375 Datasheet and Replacement


   Type Designator: KDS6375
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOP-8
 

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KDS6375 Datasheet (PDF)

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KDS6375

SMD Type ICSMD Type ICP-Channel 2.5V Specified PowerTrench MOSFETKDS6375Features-8 A, -20 V. RDS(ON) = 24m @VGS =-4.5VRDS(ON) = 32m @VGS =-2.5VLow gate charge(26nC typical)High performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS -20 VGat

Datasheet: KDS3512 , KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , KDS4953 , KDS5670 , 20N60 , KDS6685 , KDS6910 , KDS8333C , KDS8928A , KDS8958 , KDS9952A , KDV303N , KDW2503N .

History: JMSL0402AGQ

Keywords - KDS6375 MOSFET datasheet

 KDS6375 cross reference
 KDS6375 equivalent finder
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