KDS6685 Datasheet and Replacement
Type Designator: KDS6685
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 408 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP-8
KDS6685 substitution
KDS6685 Datasheet (PDF)
kds6685.pdf

SMD Type ICSMD Type IC30V P-Channel PowerTrench MOSFETKDS6685Features-8.8 A, -30 V. RDS(ON) = 20m @VGS =-10 VRDS(ON) = 35m @VGS =-4.5VLow gate charge(17 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage V
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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