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KDS6685 Specs and Replacement

Type Designator: KDS6685

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.5 nS

Cossⓘ - Output Capacitance: 408 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP-8

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KDS6685 datasheet

 ..1. Size:65K  kexin
 kds6685.pdf pdf_icon

KDS6685

SMD Type IC SMD Type IC 30V P-Channel PowerTrench MOSFET KDS6685 Features -8.8 A, -30 V. RDS(ON) = 20m @VGS =-10 V RDS(ON) = 35m @VGS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V... See More ⇒

Detailed specifications: KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375, 20N60, KDS6910, KDS8333C, KDS8928A, KDS8958, KDS9952A, KDV303N, KDW2503N, KDW2504P

Keywords - KDS6685 MOSFET specs

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