KDS6685 Datasheet and Replacement
Type Designator: KDS6685
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 408 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP-8
KDS6685 substitution
KDS6685 Datasheet (PDF)
kds6685.pdf

SMD Type ICSMD Type IC30V P-Channel PowerTrench MOSFETKDS6685Features-8.8 A, -30 V. RDS(ON) = 20m @VGS =-10 VRDS(ON) = 35m @VGS =-4.5VLow gate charge(17 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage V
Datasheet: KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , KDS4953 , KDS5670 , KDS6375 , 20N60 , KDS6910 , KDS8333C , KDS8928A , KDS8958 , KDS9952A , KDV303N , KDW2503N , KDW2504P .
History: CM50N06 | MSFA0M02X8 | VS3698AP | IRF8010 | HFD2N60F
Keywords - KDS6685 MOSFET datasheet
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History: CM50N06 | MSFA0M02X8 | VS3698AP | IRF8010 | HFD2N60F



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