KDS6685 MOSFET. Datasheet pdf. Equivalent
Type Designator: KDS6685
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 8.8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 408 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP-8
KDS6685 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KDS6685 Datasheet (PDF)
kds6685.pdf
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SMD Type ICSMD Type IC30V P-Channel PowerTrench MOSFETKDS6685Features-8.8 A, -30 V. RDS(ON) = 20m @VGS =-10 VRDS(ON) = 35m @VGS =-4.5VLow gate charge(17 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .