KDS8333C PDF and Equivalents Search

 

KDS8333C Specs and Replacement

Type Designator: KDS8333C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOP-8

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KDS8333C datasheet

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KDS8333C

SMD Type IC SMD Type Transistors 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1A, 30 V RDS(ON) = 80m @VGS =10V RDS(ON) = 130m @VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m @VGS =- 10 V RDS(ON) = 200 m @VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount ... See More ⇒

Detailed specifications: KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375, KDS6685, KDS6910, IRF540, KDS8928A, KDS8958, KDS9952A, KDV303N, KDW2503N, KDW2504P, KDW2521C, KDW258P

Keywords - KDS8333C MOSFET specs

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