All MOSFET. KDS8333C Datasheet

 

KDS8333C MOSFET. Datasheet pdf. Equivalent


   Type Designator: KDS8333C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.7 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOP-8

 KDS8333C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KDS8333C Datasheet (PDF)

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 kds8333c.pdf

KDS8333C KDS8333C

SMD Type ICSMD Type Transistors60V Complementary PowerTrench MOSFETKDS8333CFeaturesN-Channel4.1A, 30 V RDS(ON) = 80m @VGS =10VRDS(ON) = 130m @VGS =4.5VP-Channel-3.4 A, 30 V RDS(ON) = 130 m @VGS =- 10 VRDS(ON) = 200 m @VGS =-4.5VLow gate chargeHigh performance trench technology for extremely low RDS(ON).High power and handling capability in a widely usedsurface mount

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