All MOSFET. KDS9952A Datasheet

 

KDS9952A Datasheet and Replacement


   Type Designator: KDS9952A
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOP-8
 

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KDS9952A Datasheet (PDF)

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KDS9952A

SMD Type ICSMD Type TransistorsDual N & P-Channel Enhancement ModeField Effect TransistorKDS9952AFeaturesN-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.High density cell design or extremely low RDS(ON).High power and current handling capability in a widely usedsurface mount package.Dual (N & P-Channel) MOSFET in surface mount p

Datasheet: KDS4953 , KDS5670 , KDS6375 , KDS6685 , KDS6910 , KDS8333C , KDS8928A , KDS8958 , IRFZ44 , KDV303N , KDW2503N , KDW2504P , KDW2521C , KDW258P , KE3587-G , KF10N65F , KF16N25D .

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