KDS9952A MOSFET Datasheet: NP-Ch, 30V, 3.7A. Full specification with pinout and replacement list

KDS9952A Specs and Replacement

Type Designator: KDS9952A

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOP-8

KDS9952A substitution

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KDS9952A datasheet

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SMD Type IC SMD Type Transistors Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount p... See More ⇒

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