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KDV303N Specs and Replacement

Type Designator: KDV303N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: SOT-23

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KDV303N datasheet

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 kdv303n.pdf pdf_icon

KDV303N

SMD Type IC SMD Type MOSFET Digital FET, N-Channel KDV303N SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 0.68 A, 25 V. RDS(ON) = 0.45 @ VGS = 4.5 V 3 RDS(ON) = 0.6 @ VGS = 2.7 V. Very low level gate drive requirements allowing direct 12 operation in 3V circuits. VGS(th) ... See More ⇒

Detailed specifications: KDS5670, KDS6375, KDS6685, KDS6910, KDS8333C, KDS8928A, KDS8958, KDS9952A, IRF640, KDW2503N, KDW2504P, KDW2521C, KDW258P, KE3587-G, KF10N65F, KF16N25D, KF16N25F

Keywords - KDV303N MOSFET specs

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