All MOSFET. KDV303N Datasheet

 

KDV303N Datasheet and Replacement


   Type Designator: KDV303N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-23
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KDV303N Datasheet (PDF)

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KDV303N

SMD Type ICSMD Type MOSFETDigital FET, N-ChannelKDV303NSOT-23Unit: mm+0.12.9-0.1 Features+0.10.4-0.1 0.68 A, 25 V. RDS(ON) = 0.45 @ VGS = 4.5 V 3 RDS(ON) = 0.6 @ VGS = 2.7 V. Very low level gate drive requirements allowing direct12operation in 3V circuits. VGS(th)

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History: IXTP2N60P | HYG092N10LS1C2 | IRLU2908 | IRFBC30AS | 2SK741

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