All MOSFET. KDV303N Datasheet

 

KDV303N Datasheet and Replacement


   Type Designator: KDV303N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.68 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-23
 

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KDV303N Datasheet (PDF)

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KDV303N

SMD Type ICSMD Type MOSFETDigital FET, N-ChannelKDV303NSOT-23Unit: mm+0.12.9-0.1 Features+0.10.4-0.1 0.68 A, 25 V. RDS(ON) = 0.45 @ VGS = 4.5 V 3 RDS(ON) = 0.6 @ VGS = 2.7 V. Very low level gate drive requirements allowing direct12operation in 3V circuits. VGS(th)

Datasheet: KDS5670 , KDS6375 , KDS6685 , KDS6910 , KDS8333C , KDS8928A , KDS8958 , KDS9952A , IRFZ44 , KDW2503N , KDW2504P , KDW2521C , KDW258P , KE3587-G , KF10N65F , KF16N25D , KF16N25F .

History: KDS8958 | JMTR3002A | JMSL0402PTL

Keywords - KDV303N MOSFET datasheet

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