All MOSFET. KE3587-G Datasheet

 

KE3587-G Datasheet and Replacement


   Type Designator: KE3587-G
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-163
 

 KE3587-G substitution

   - MOSFET ⓘ Cross-Reference Search

 

KE3587-G Datasheet (PDF)

 ..1. Size:159K  tysemi
 ke3587-g me3587-g.pdf pdf_icon

KE3587-G

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification(ME3587-G)KE3587-G ( )SOT-23-6Unit: mm FeaturesN-channel:VDS=20V ID=4A RDS(ON)0.045 @VGS=4.5V S1 D2 D1 RDS(ON)0.068 @VGS=2.5V RDS(ON)0.12 @VGS=1.8VP-channel:VDS=-20V ID=-2A0to0.1 RDS(ON)0.11 @VGS=-4.5V

Datasheet: KDS8928A , KDS8958 , KDS9952A , KDV303N , KDW2503N , KDW2504P , KDW2521C , KDW258P , 10N60 , KF10N65F , KF16N25D , KF16N25F , KF19N20D , KF19N20F , KF4N60D , KF4N60F , KF4N65FM .

History: STP2N60

Keywords - KE3587-G MOSFET datasheet

 KE3587-G cross reference
 KE3587-G equivalent finder
 KE3587-G lookup
 KE3587-G substitution
 KE3587-G replacement

 

 
Back to Top

 


 
.