All MOSFET. OM1N100SA Datasheet

 

OM1N100SA Datasheet and Replacement


   Type Designator: OM1N100SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.2 Ohm
   Package: TO254AA
 

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OM1N100SA Datasheet (PDF)

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OM1N100SA

OM1N100SA OM5N100SA OM1N100STOM3N100SA OM6N100SA OM3N100STPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE1000V, Up To 6 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically pa

Datasheet: NDT452AP , NDT452P , NDT453N , NDT454P , NDT455N , NDT456P , OM11N55SA , OM11N60SA , IRF640N , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT .

History: KP819AC | FDT1600N10A | IRFHS9301PBF

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