OM1N100SA Spec and Replacement
Type Designator: OM1N100SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.2 Ohm
Package: TO254AA
OM1N100SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OM1N100SA Specs
om1n100sa.pdf
OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically pa... See More ⇒
Detailed specifications: NDT452AP , NDT452P , NDT453N , NDT454P , NDT455N , NDT456P , OM11N55SA , OM11N60SA , IRFB4110 , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT .
Keywords - OM1N100SA MOSFET specs
OM1N100SA cross reference
OM1N100SA equivalent finder
OM1N100SA lookup
OM1N100SA substitution
OM1N100SA replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
