OM5N100SA Datasheet and Replacement
Type Designator: OM5N100SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.2 Ohm
Package: TO254AA
OM5N100SA substitution
OM5N100SA Datasheet (PDF)
om5n100nk.pdf

OM5N100NKOM6N100NKPOWER MOSFETS IN A TO-3 PACKAGE1000V, Up To 6 Amp, N-ChannelMOSFETs In A TO-3 PackageFEATURES TO-3 Hermetic Package, .060 Dia. Leads Fast Switching Low RDS(on) 1000 Volt, Size 5 Die Available Screened To MIL-S-19500, TX, TXV And S LevelsDESCRIPTIONThis series of hermetically packaged products feature the latest advanced MOSFETand packag
Datasheet: NDT455N , NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , AON6414A , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E .
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