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OM5N100SA Spec and Replacement


   Type Designator: OM5N100SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.2 Ohm
   Package: TO254AA

 OM5N100SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OM5N100SA Specs

 7.1. Size:19K  omnirel
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OM5N100SA

OM5N100NK OM6N100NK POWER MOSFETS IN A TO-3 PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFETs In A TO-3 Package FEATURES TO-3 Hermetic Package, .060 Dia. Leads Fast Switching Low RDS(on) 1000 Volt, Size 5 Die Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packag... See More ⇒

Detailed specifications: NDT455N , NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , IRFB4227 , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E .

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