All MOSFET. KI2323DS Datasheet

 

KI2323DS Datasheet and Replacement


   Type Designator: KI2323DS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 191 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOT-23
      - MOSFET Cross-Reference Search

 

KI2323DS Datasheet (PDF)

 ..1. Size:50K  kexin
 ki2323ds.pdf pdf_icon

KI2323DS

SMD Type ICSMD Type TransistorsP-Channel 20-V (D-S) MOSFETKI2323DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesTrenchFET Power MOSFET12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -20 VGate-Source Volta

 8.1. Size:144K  kexin
 ki2323.pdf pdf_icon

KI2323DS

SMD Type MOSFETP-Channel Enhancement MOSFET KI2323 Features3 VDS (V) =-20V ID =-4.7A (VGS =-4.5V) RDS(ON) 60m (VGS =-4.5V)12 RDS(ON) 90m (VGS =-2.5V) G 13 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State

 9.1. Size:437K  tysemi
 ki2321ds.pdf pdf_icon

KI2323DS

SMD Type ICSMD Type MOSFETSMD Type MOSFETProduct specification KI2321DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS (V) = -30VID =-4.2A(VGS = -10V)RDS(ON)

 9.2. Size:52K  kexin
 ki2325ds.pdf pdf_icon

KI2323DS

SMD Type ICSMD Type TransistorsP-Channel 150-V (D-S) MOSFETKI2325DSSOT-23Unit: mm+0.12.9-0.1Features +0.10.4-0.13TrenchFET Power MOSFETUltra Low On-ResistanceSmall Size12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source

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Keywords - KI2323DS MOSFET datasheet

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