KI4953DY MOSFET. Datasheet pdf. Equivalent
Type Designator: KI4953DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 13 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP-8
KI4953DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KI4953DY Datasheet (PDF)
ki4953dy.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type ICSMD Type ICDual P-Channel 30-V(D-S) MOSFETKI4953DYFeatures100% Rg Tested1: Source 13: Source 22: Gate 1 4: Gate 27,8: Drain 1 5,6: Drain 2Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30VGate-Source Voltage VGS 20TA =25 -4.9Continuous Drain Current (TJ = 150 ) * IDTA =70 -3.9APulsed Drain Current IDM -30C
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .