All MOSFET. PHB24N03LT Datasheet

 

PHB24N03LT Datasheet and Replacement


   Type Designator: PHB24N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOT404
 

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PHB24N03LT Datasheet (PDF)

 ..1. Size:54K  philips
 php24n03lt phb24n03lt.pdf pdf_icon

PHB24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V)g Low thermal resistance

 6.1. Size:51K  philips
 phb24n03t 1.pdf pdf_icon

PHB24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB24N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 24 Atrench technology. The devic

Datasheet: OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , IRFB4115 , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , PHB42N03LT , PHB44N06LT .

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