PHB24N03LT Datasheet and Replacement
Type Designator: PHB24N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SOT404
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PHB24N03LT Datasheet (PDF)
php24n03lt phb24n03lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V)g Low thermal resistance
phb24n03t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB24N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 24 Atrench technology. The devic
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FQI4N90 | IRF740PBF | IRLML6402G | H7N0607DS | CMPF4391 | HUF75343G3 | FR9N20D
Keywords - PHB24N03LT MOSFET datasheet
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History: FQI4N90 | IRF740PBF | IRLML6402G | H7N0607DS | CMPF4391 | HUF75343G3 | FR9N20D



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