All MOSFET. PHB24N03LT Datasheet

 

PHB24N03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHB24N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOT404

 PHB24N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB24N03LT Datasheet (PDF)

 ..1. Size:54K  philips
 php24n03lt phb24n03lt.pdf

PHB24N03LT PHB24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V)g Low thermal resistance

 6.1. Size:51K  philips
 phb24n03t 1.pdf

PHB24N03LT PHB24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB24N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 24 Atrench technology. The devic

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