PHB24N03LT Specs and Replacement
Type Designator: PHB24N03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SOT404
PHB24N03LT substitution
- MOSFET ⓘ Cross-Reference Search
PHB24N03LT datasheet
php24n03lt phb24n03lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 V d Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V) g Low thermal resistance ... See More ⇒
phb24n03t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB24N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 24 A trench technology. The devic... See More ⇒
Detailed specifications: OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E, PHB125N06LT, PHB130N03LT, PHB21N06LT, P55NF06, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT, PHB44N06LT
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
