KP819AC PDF and Equivalents Search

 

KP819AC Specs and Replacement

Type Designator: KP819AC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 438 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 310 pF

Package: KT-82

KP819AC substitution

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KP819AC datasheet

 ..1. Size:101K  syntez microelectronics
 kp819ac.pdf pdf_icon

KP819AC

Syntez Microelectronics KP819AC SILICON MOS N-CHANNEL POWER TRANSISTOR 300 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 28 Vdc Power Gain 10 dB Min Output Power 300 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value ... See More ⇒

Detailed specifications: KO3413, KO3414, KO3416, KO3419, KO3423, KO8822, KP11N60D, KP11N60F, 12N60, KP821A, KP821B, KP826AC, KP8M10, KP8M3, KP8M4, KP8M5, KP8M6

Keywords - KP819AC MOSFET specs

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