KP821A Datasheet and Replacement
Type Designator: KP821A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 14 pF
Package: KT-83
KP821A substitution
KP821A Datasheet (PDF)
kp821a.pdf

Syntez MicroelectronicsKP821ASILICON MOS N-CHANNEL POWER TRANSISTOR5 W, up to 175 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Power Gain: 19 dB Min Output Power: 5 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value UnitDrain-Source Voltage VDSS 65 VDC
kp821b.pdf

Syntez MicroelectronicsKP821BSILICON MOS N-CHANNEL POWER TRANSISTOR30 W, up to 175 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Power Gain: 16 dB Min Output Power: 30 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value UnitDrain-Source Voltage V 65 VDSS
Datasheet: KO3414 , KO3416 , KO3419 , KO3423 , KO8822 , KP11N60D , KP11N60F , KP819AC , IRF4905 , KP821B , KP826AC , KP8M10 , KP8M3 , KP8M4 , KP8M5 , KP8M6 , KP8M7 .
History: KP8M10
Keywords - KP821A MOSFET datasheet
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History: KP8M10



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