KP821A MOSFET. Datasheet pdf. Equivalent
Type Designator: KP821A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 14 pF
Package: KT-83
KP821A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KP821A Datasheet (PDF)
kp821a.pdf
Syntez MicroelectronicsKP821ASILICON MOS N-CHANNEL POWER TRANSISTOR5 W, up to 175 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Power Gain: 19 dB Min Output Power: 5 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value UnitDrain-Source Voltage VDSS 65 VDC
kp821b.pdf
Syntez MicroelectronicsKP821BSILICON MOS N-CHANNEL POWER TRANSISTOR30 W, up to 175 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Power Gain: 16 dB Min Output Power: 30 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value UnitDrain-Source Voltage V 65 VDSS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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