KP821A Specs and Replacement
Type Designator: KP821A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 14 pF
Package: KT-83
KP821A substitution
- MOSFET ⓘ Cross-Reference Search
KP821A datasheet
kp821a.pdf
Syntez Microelectronics KP821A SILICON MOS N-CHANNEL POWER TRANSISTOR 5 W, up to 175 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Power Gain 19 dB Min Output Power 5 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value Unit Drain-Source Voltage VDSS 65 VDC ... See More ⇒
kp821b.pdf
Syntez Microelectronics KP821B SILICON MOS N-CHANNEL POWER TRANSISTOR 30 W, up to 175 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Power Gain 16 dB Min Output Power 30 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value Unit Drain-Source Voltage V 65 V DSS... See More ⇒
Detailed specifications: KO3414, KO3416, KO3419, KO3423, KO8822, KP11N60D, KP11N60F, KP819AC, 5N65, KP821B, KP826AC, KP8M10, KP8M3, KP8M4, KP8M5, KP8M6, KP8M7
Keywords - KP821A MOSFET specs
KP821A cross reference
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