All MOSFET. KP821B Datasheet

 

KP821B Datasheet and Replacement


   Type Designator: KP821B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 62 pF
   Package: KT-83
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KP821B Datasheet (PDF)

 ..1. Size:101K  syntez microelectronics
 kp821b.pdf pdf_icon

KP821B

Syntez MicroelectronicsKP821BSILICON MOS N-CHANNEL POWER TRANSISTOR30 W, up to 175 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Power Gain: 16 dB Min Output Power: 30 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value UnitDrain-Source Voltage V 65 VDSS

 9.1. Size:101K  syntez microelectronics
 kp821a.pdf pdf_icon

KP821B

Syntez MicroelectronicsKP821ASILICON MOS N-CHANNEL POWER TRANSISTOR5 W, up to 175 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Power Gain: 19 dB Min Output Power: 5 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value UnitDrain-Source Voltage VDSS 65 VDC

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History: VBNC1303 | IRFS4010PBF

Keywords - KP821B MOSFET datasheet

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