KP826AC Specs and Replacement
Type Designator: KP826AC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 972 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 850 pF
Package: KT-102-1
KP826AC substitution
- MOSFET ⓘ Cross-Reference Search
KP826AC datasheet
kp826ac.pdf
Syntez Microelectronics KP826AC SILICON MOS N-CHANNEL POWER TRANSISTOR 600 W, up to 80 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF frequency range. Features Performance at 30 MHz, 50 Vdc Power Gain 14 dB Min Output Power 600 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value Unit D... See More ⇒
Detailed specifications: KO3419, KO3423, KO8822, KP11N60D, KP11N60F, KP819AC, KP821A, KP821B, IRFB3607, KP8M10, KP8M3, KP8M4, KP8M5, KP8M6, KP8M7, KP8M8, KP8M9
Keywords - KP826AC MOSFET specs
KP826AC cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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