KP8M10 Datasheet and Replacement
Type Designator: KP8M10
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP-8
KP8M10 substitution
KP8M10 Datasheet (PDF)
kp8m10.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ
Datasheet: KO3423 , KO8822 , KP11N60D , KP11N60F , KP819AC , KP821A , KP821B , KP826AC , IRLZ44N , KP8M3 , KP8M4 , KP8M5 , KP8M6 , KP8M7 , KP8M8 , KP8M9 , KP8N60D .
History: STP180N4F6 | BUZ102 | IRLL014PBF | RP1E100XN | PFF12N65 | SML5020BN
Keywords - KP8M10 MOSFET datasheet
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History: STP180N4F6 | BUZ102 | IRLL014PBF | RP1E100XN | PFF12N65 | SML5020BN



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