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KP8M8 Specs and Replacement

Type Designator: KP8M8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP-8

KP8M8 substitution

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KP8M8 datasheet

 ..1. Size:52K  kexin
 kp8m8.pdf pdf_icon

KP8M8

SMD Type IC SMD Type IC Switching KP8M8 Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage VDSS 30 -30 V Gate-source voltage VGSS 20 -20 V Drain current Continuous ID 6.0 4.5 A Drain current Pulsed * IDP 24 18 ... See More ⇒

Detailed specifications: KP821B, KP826AC, KP8M10, KP8M3, KP8M4, KP8M5, KP8M6, KP8M7, IRFP450, KP8M9, KP8N60D, KP8N60F, KP8N65D, KP977AC, KP978A, KP978BC, KP978GC

Keywords - KP8M8 MOSFET specs

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