All MOSFET. KP8N60D Datasheet

 

KP8N60D Datasheet and Replacement


   Type Designator: KP8N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: DPAK
 

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KP8N60D Datasheet (PDF)

 ..1. Size:385K  kec
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KP8N60D

KP8N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N60DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio

 8.1. Size:382K  kec
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KP8N60D

KP8N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

 8.2. Size:246K  inchange semiconductor
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KP8N60D

isc N-Channel MOSFET Transistor KP8N60FFEATURESStatic drain-source on-resistance:RDS(on) 0.58Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for active power factor correction and switching modePower suppliesABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:386K  kec
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KP8N60D

KP8N65D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N65DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio

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Datasheet: KP8M10 , KP8M3 , KP8M4 , KP8M5 , KP8M6 , KP8M7 , KP8M8 , KP8M9 , P60NF06 , KP8N60F , KP8N65D , KP977AC , KP978A , KP978BC , KP978GC , KP978VC , KP979A .

History: SSM6N7002KFU | PHB160NQ08T

Keywords - KP8N60D MOSFET datasheet

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