KP8N60D PDF Specs and Replacement
Type Designator: KP8N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: DPAK
KP8N60D substitution
KP8N60D PDF Specs
kp8n60d.pdf
KP8N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KP8N60D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correctio... See More ⇒
kp8n60f.pdf
KP8N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli... See More ⇒
kp8n65d.pdf
KP8N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KP8N65D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correctio... See More ⇒
Detailed specifications: KP8M10 , KP8M3 , KP8M4 , KP8M5 , KP8M6 , KP8M7 , KP8M8 , KP8M9 , AO4407 , KP8N60F , KP8N65D , KP977AC , KP978A , KP978BC , KP978GC , KP978VC , KP979A .
Keywords - KP8N60D MOSFET specs
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